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FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
July 2015
FDMT800120DC
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
120 V, 128 A, 4.2 mΩ
Features
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMT800120DC Datasheet
