FDMT800120DC Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient . Applications MSL1 robust package design OringFET / Load Switching 100% UIL tested Synchronous Rectification RoHS...
FDMT800120DC Key Features
- Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package
